PANDA CIS Sensors

Review of the properties of the PANDA strip sensors:

General properties
wafer material	FZ Si, 4'', n/P
thickness	285 ± 10 µm
resistivity	2.3 ... 5.0 kΩ · cm
n-side isolation	p-spray
guard rings	8, on p-side
stereo angle	90°

Corners
passive rim (including guard rings, excluding bias)	750 µm
bias ring	110 µm
limit active area	860 µm

Position of the pads (does NOT apply to s65 "Baby" sensors)

Pad	Distance from chip rim	Distance from active area limit
DC pad	1361 µm	500 µm
AC pad row 1	2861 µm	2000 µm
AC pad row 2	3661 µm	2800 µm
AC pad row 3	6861 µm	6000 µm
AC pad row 4	7661 µm	6800 µm

• Schematic drawing of the strip sensors (click to view larger):
  

Properties of the individual sensors:

S1 / Spssdb65
n-side strips	512 (long)
p-side strips	896 (short)
pitch	65 µm
active area	58.275 × 33.315 mm2
S2 / Spssdm65
n-side strips	512
p-side strips	512
pitch	65 µm
active area	33.315 × 33.315 mm2
S3 / Spssdm50
n-side strips	384
p-side strips	384
pitch	50 µm
active area	19.230 × 19.230 mm2
S4 / Spssds65 / s65 "Baby"
n-side strips	128
p-side strips	128
pitch	65 µm
active area	8.355 × 8.355 mm2

Other information: CIS report

• Corner of the sensor (n-side):
  

• Corner of the sensor (p-side):
  

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-- TommasoQuagli - 19 Dec 2012